600V, 40A Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V collector-emitter breakdown voltage and a maximum collector current of 40A. Offers a low collector-emitter saturation voltage of 3.1V and a power dissipation of 100W. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied in a rail/tube package.
Current Rating40A
MountingThrough Hole
Power100W
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Technical Specifications
Onsemi FGAF40N60UFDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 3.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 40A |
| Height | 26.5mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 95ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Weight | 6.962g |
| Width | 5.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGAF40N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGAF40N60UFDTU to view detailed technical specifications.
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