Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 40A continuous current rating. Features a low 3V Collector-Emitter Saturation Voltage and 100W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a through-hole SC case, this RoHS compliant component is supplied in a rail/tube format.
PackageSC
Current Rating40A
MountingThrough Hole
Power100W
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Technical Specifications
Onsemi FGAF40N60UFTU technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 600V |
| Height | 26.5mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FGAF40N60 |
| DC Rated Voltage | 600V |
| Weight | 6.962g |
| Width | 5.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGAF40N60UFTU Datasheet
Download the complete datasheet for Onsemi FGAF40N60UFTU to view detailed technical specifications.
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