N-Channel Insulated Gate Bipolar Transistor (IGBT) for ignition applications, featuring a 430V collector-emitter breakdown voltage and a maximum collector current of 21A. This surface-mount device, housed in a TO-263 package, offers a 1.6V collector-emitter saturation voltage and 150W power dissipation. Operating across a temperature range of -40°C to 175°C, it includes a 400V clamping voltage and is RoHS compliant.
PackageTO-263
MountingSurface Mount
Power150W
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Technical Specifications
Onsemi FGB3040CS technical specifications.
General
Package/Case
TO-263
Clamping Voltage
400V
Collector Emitter Breakdown Voltage
430V
Collector Emitter Voltage (VCEO)
1.85V
Collector-emitter Voltage-Max
1.6V
Height
4.7mm
Lead Free
Lead Free
Length
10.1mm
Max Breakdown Voltage
430V
Max Collector Current
21A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Outputs
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
150W
Radiation Hardening
No
RoHS Compliant
Yes
Series
EcoSPARK™
Turn-Off Delay Time
4.7us
Turn-On Delay Time
0.6us
Weight
1.312g
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGB3040CS Datasheet
Download the complete datasheet for Onsemi FGB3040CS to view detailed technical specifications.
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