N-Channel Insulated Gate Bipolar Transistor (IGBT) for ignition applications, featuring a 430V collector-emitter breakdown voltage and a maximum collector current of 21A. This surface-mount device, housed in a TO-263 package, offers a 1.6V collector-emitter saturation voltage and 150W power dissipation. Operating across a temperature range of -40°C to 175°C, it includes a 400V clamping voltage and is RoHS compliant.
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| Package/Case | TO-263 |
| Clamping Voltage | 400V |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Voltage (VCEO) | 1.85V |
| Collector-emitter Voltage-Max | 1.6V |
| Height | 4.7mm |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Breakdown Voltage | 430V |
| Max Collector Current | 21A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | EcoSPARK™ |
| Turn-Off Delay Time | 4.7us |
| Turn-On Delay Time | 0.6us |
| Weight | 1.312g |
| Width | 9.4mm |
| RoHS | Compliant |
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onsemi product discontinuance notice PD24792Z for various image sensors, power management ICs, and discretes. Last time buy date is December 30, 2022.
