The FGB30N6S2T is a 600V insulated gate bipolar transistor with a maximum collector current of 45A. It features a TO-263-3 package and is designed for surface mount applications. The device is rated for operation between -55°C and 150°C and has a maximum power dissipation of 167W. The FGB30N6S2T is lead-free and RoHS compliant.
PackageTO-263-3
Current Rating45A
MountingSurface Mount
Power167W
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Technical Specifications
Onsemi FGB30N6S2T technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 45A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 167W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGB30N6S2T Datasheet
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