The FGB40N6S2 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It features a TO-263AB package and is designed for surface mount applications. The device has a maximum operating temperature range of -55°C to 150°C and is compliant with RoHS regulations. The FGB40N6S2 has a maximum power dissipation of 290W and a collector-emitter breakdown voltage of 600V.
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Onsemi FGB40N6S2 technical specifications.
| Package/Case | TO-263AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 75A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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