The FGD3440G2 is an insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 400V and a maximum collector current of 26.9A. It is designed for surface mount applications and has a maximum operating temperature of 175°C. The device is packaged in a TO-252-3 package and is available in tape and reel packaging. The FGD3440G2 is part of Onsemi's EcoSPARK series, which offers high-performance and reliable solutions for various applications.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Onsemi FGD3440G2 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 1.2V |
| Max Collector Current | 26.9A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 166W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Series | EcoSPARK® |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGD3440G2 Datasheet
Download the complete datasheet for Onsemi FGD3440G2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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