The FGD3440G2-F085 is an insulated gate bipolar transistor with a maximum collector current of 26.9A and a maximum operating temperature of 175°C. It is packaged in a TO-252-3 surface mount package and is compliant with RoHS regulations. The device has a maximum breakdown voltage of 400V and a maximum power dissipation of 166W. It is suitable for use in automotive applications and is certified to AEC-Q101 standards.
Onsemi FGD3440G2-F085 technical specifications.
| Package/Case | TO-252-3 |
| Clamping Voltage | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 26.9A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 166W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, EcoSPARK® |
| Weight | 0.26037g |
| RoHS | Compliant |
No datasheet is available for this part.
