N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for automotive applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 6A. Offers a low collector-emitter saturation voltage of 1.2V and a maximum power dissipation of 40W. Packaged in a DPAK surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageDPAK
Current Rating6A
MountingSurface Mount
Power40W
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Technical Specifications
Onsemi FGD3N60LSDTM technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 6A |
| Current Rating | 6A |
| Height | 2.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reverse Recovery Time | 234ns |
| RoHS Compliant | Yes |
| Series | FGD3N60LSD |
| Turn-Off Delay Time | 600ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGD3N60LSDTM Datasheet
Download the complete datasheet for Onsemi FGD3N60LSDTM to view detailed technical specifications.
No datasheet is available for this part.