Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector Emitter Breakdown Voltage and 20A continuous collector current. This through-hole component offers a low Collector-emitter Saturation Voltage of 2.4V and a maximum power dissipation of 165W. Designed with a Field Stop structure, it operates within a temperature range of -55°C to 150°C and includes a 34ns reverse recovery time. Packaged in TO-247AB, this RoHS compliant device is suitable for demanding applications.
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Onsemi FGH20N60UFDTU technical specifications.
| Package/Case | TO-247AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 34ns |
| RoHS Compliant | Yes |
| Series | FGH20N60 |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 13ns |
| Weight | 6.39g |
| Width | 4.7mm |
| RoHS | Compliant |
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