Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector Emitter Breakdown Voltage and 20A continuous collector current. This through-hole component offers a low Collector-emitter Saturation Voltage of 2.4V and a maximum power dissipation of 165W. Designed with a Field Stop structure, it operates within a temperature range of -55°C to 150°C and includes a 34ns reverse recovery time. Packaged in TO-247AB, this RoHS compliant device is suitable for demanding applications.
PackageTO-247AB
MountingThrough Hole
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Technical Specifications
Onsemi FGH20N60UFDTU technical specifications.
General
Package/Case
TO-247AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Height
20.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.6mm
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
165W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
34ns
RoHS Compliant
Yes
Series
FGH20N60
Turn-Off Delay Time
87ns
Turn-On Delay Time
13ns
Weight
6.39g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGH20N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGH20N60UFDTU to view detailed technical specifications.
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