The FGH30N6S2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 45A. It is packaged in a TO-247-3 package and is designed for through-hole mounting. The transistor has a maximum power dissipation of 167W and operates over a temperature range of -55°C to 150°C. The device is lead-free and RoHS compliant.
PackageTO-247-3
Current Rating45A
MountingThrough Hole
Power167W
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Technical Specifications
Onsemi FGH30N6S2 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 45A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH30N6S2 Datasheet
Download the complete datasheet for Onsemi FGH30N6S2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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