The FGH40N120ANTU is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 64A. It is packaged in a TO-247AB case and is designed for through-hole mounting. The device has a maximum power dissipation of 417W and operates over a temperature range of -55°C to 150°C. The FGH40N120ANTU is RoHS compliant and available in quantities of 30 per rail/tube packaging.
PackageTO-247AB
MountingThrough Hole
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Technical Specifications
Onsemi FGH40N120ANTU technical specifications.
General
| Package/Case | TO-247AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Length | 15.6mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 64A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH40N120ANTU Datasheet
Download the complete datasheet for Onsemi FGH40N120ANTU to view detailed technical specifications.
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