The FGH40N60SMD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device has a maximum power dissipation of 349W and operates over a temperature range of -55°C to 175°C. It is RoHS compliant and lead free.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi FGH40N60SMD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 349W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 36ns |
| RoHS Compliant | Yes |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH40N60SMD Datasheet
Download the complete datasheet for Onsemi FGH40N60SMD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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