Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 80A Continuous Collector Current. This device offers a low 2.4V Collector-Emitter Saturation Voltage and a maximum power dissipation of 290W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and 112ns turn-off delay, with a 45ns reverse recovery time.
PackageTO-247-3
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi FGH40N60UFDTU technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Continuous Collector Current | 80A |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 45ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 112ns |
| Turn-On Delay Time | 24ns |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH40N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGH40N60UFDTU to view detailed technical specifications.
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