Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 80A Continuous Collector Current. This device offers a low 2.4V Collector-Emitter Saturation Voltage and a maximum power dissipation of 290W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and 112ns turn-off delay, with a 45ns reverse recovery time.
PackageTO-247-3
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi FGH40N60UFDTU technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Continuous Collector Current
80A
Height
20.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.6mm
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Power Dissipation
290W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
45ns
RoHS Compliant
Yes
Turn-Off Delay Time
112ns
Turn-On Delay Time
24ns
Weight
6.39g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGH40N60UFDTU Datasheet
Download the complete datasheet for Onsemi FGH40N60UFDTU to view detailed technical specifications.
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