The FGH40N6S2D is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It is packaged in a TO-247-3 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 290W, this IGBT is suitable for high-power applications.
PackageTO-247-3
Current Rating75A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi FGH40N6S2D technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 75A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Reverse Recovery Time | 48ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH40N6S2D Datasheet
Download the complete datasheet for Onsemi FGH40N6S2D to view detailed technical specifications.
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