Insulated Gate Bipolar Transistor (IGBT) with a 300V Collector Emitter Breakdown Voltage and 75A maximum collector current. Features a low 1.3V Collector Emitter Saturation Voltage and 463W maximum power dissipation. Packaged in a TO-247 case for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C. Ideal for Switched-Mode Power Supply (SMPS) applications.
PackageTO-247
Current Rating75A
MountingThrough Hole
Power463W
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Technical Specifications
Onsemi FGH50N3 technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
1.3V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
1.4V
Current Rating
75A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
463W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
463W
Radiation Hardening
No
RoHS Compliant
Yes
Series
FGH50N3
Turn-Off Delay Time
135ns
Turn-On Delay Time
20ns
DC Rated Voltage
300V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FGH50N3 Datasheet
Download the complete datasheet for Onsemi FGH50N3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.