Insulated Gate Bipolar Transistor (IGBT) with a 300V Collector Emitter Breakdown Voltage and 75A maximum collector current. Features a low 1.3V Collector Emitter Saturation Voltage and 463W maximum power dissipation. Packaged in a TO-247 case for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C. Ideal for Switched-Mode Power Supply (SMPS) applications.
PackageTO-247
Current Rating75A
MountingThrough Hole
Power463W
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Technical Specifications
Onsemi FGH50N3 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 75A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 463W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 463W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGH50N3 |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 300V |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH50N3 Datasheet
Download the complete datasheet for Onsemi FGH50N3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.