N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a maximum collector current of 120A. Offers a low collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 600W. Packaged in a TO-247 case with through-hole mounting, operating from -55°C to 175°C. RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi FGH60N60SMD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 39ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 146ns |
| Turn-On Delay Time | 27ns |
| Weight | 6.39g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH60N60SMD Datasheet
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