The FGH75N60SFTU is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 150A. It is packaged in a TO-247-3 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 452W. The FGH75N60SFTU is compliant with RoHS regulations and is available in quantities of 150 per rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Onsemi FGH75N60SFTU technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.9V |
| Input Type | STANDARD |
| Max Collector Current | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 452W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGH75N60S |
| Weight | 6.39g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH75N60SFTU Datasheet
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