The FGH75T65UPD is a 650V insulated gate bipolar transistor (IGBT) with a maximum collector current of 150A. It is packaged in a TO-247-3LD, 3 PIN package and is suitable for high-power applications. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is RoHS compliant and is available in a package quantity of 30.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi FGH75T65UPD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.82mm |
| Input Type | STANDARD |
| Length | 15.87mm |
| Max Collector Current | 150A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 85ns |
| RoHS Compliant | Yes |
| Series | FGH75T65UPD |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGH75T65UPD Datasheet
Download the complete datasheet for Onsemi FGH75T65UPD to view detailed technical specifications.
No datasheet is available for this part.