N-channel Insulated Gate Bipolar Transistor (IGBT) chip for high-voltage applications. Features a 1.2kV collector-emitter breakdown voltage and a continuous collector current rating of 64A. This component offers a maximum power dissipation of 500W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-264-3 with through-hole mounting, it boasts a turn-on delay time of 15ns and a turn-off delay time of 110ns.
PackageTO-264-3
Current Rating64A
MountingThrough Hole
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Technical Specifications
Onsemi FGL40N120ANDTU technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Current Rating | 64A |
| Height | 26mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20mm |
| Max Collector Current | 64A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 112ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1.2kV |
| Weight | 6.756g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGL40N120ANDTU Datasheet
Download the complete datasheet for Onsemi FGL40N120ANDTU to view detailed technical specifications.
No datasheet is available for this part.