Insulated Gate Bipolar Transistor (IGBT) with 600V Collector Emitter Breakdown Voltage and 10A continuous collector current. Features a low 2.3V Collector Emitter Saturation Voltage and 139W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C. Includes fast switching characteristics with an 8.1ns turn-on delay and 55ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
Power139W
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Technical Specifications
Onsemi FGP10N60UNDF technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.45V |
| Height | 16.51mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 139W |
| Radiation Hardening | No |
| Reverse Recovery Time | 37.7ns |
| RoHS Compliant | Yes |
| Series | FGP10N60UNDF |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGP10N60UNDF Datasheet
Download the complete datasheet for Onsemi FGP10N60UNDF to view detailed technical specifications.
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