The FGP15N60UNDF is a 600V insulated gate bipolar transistor with a maximum collector current of 30A and a maximum power dissipation of 178W. It is packaged in a TO-220-3 flange mount package and is suitable for through-hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-220-3
MountingThrough Hole
Power178W
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Technical Specifications
Onsemi FGP15N60UNDF technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 2.7V |
| Height | 16.51mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 178W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 178W |
| Radiation Hardening | No |
| Reverse Recovery Time | 82.4ns |
| RoHS Compliant | Yes |
| Series | FGP15N60UNDF |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGP15N60UNDF Datasheet
Download the complete datasheet for Onsemi FGP15N60UNDF to view detailed technical specifications.
No datasheet is available for this part.
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