
The FGPF4533 is a TO-220-3 packaged insulated gate bipolar transistor with a collector-emitter breakdown voltage of 330V and a maximum collector current of 200mA. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 28.4W. This device is RoHS compliant and available in a packaging quantity of 50 units per rail or tube. It is not radiation hardened.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 330V |
| Collector Emitter Voltage (VCEO) | 330V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28.4W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FGPF4533 to view detailed technical specifications.
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