The FGPF4536 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 360V and a maximum power dissipation of 28.4W. It is packaged in a TO-220-3 flange mount package and is available in quantities of 50. The device is RoHS compliant and has an operating temperature range of -55°C to 150°C. It is designed for use in a variety of applications, including those requiring high power handling and reliable operation.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 360V |
| Collector Emitter Saturation Voltage | 1.59V |
| Collector Emitter Voltage (VCEO) | 360V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28.4W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 28.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FGPF4536 |
| Weight | 0.080072oz |
| RoHS | Compliant |
These are design resources that include the Onsemi FGPF4536
Official notice from onsemi regarding the discontinuance of several semiconductor products, including MOSFETs, image sensors, and power modules, effective June 2022.
