The FGY75N60SMD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 150A. It has a maximum power dissipation of 750W and is packaged in a TO-247-3 case with a through-hole mount. The transistor operates within a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
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Onsemi FGY75N60SMD technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.32mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 150A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Weight | 7.629g |
| Width | 4.82mm |
| RoHS | Compliant |
No datasheet is available for this part.
