The FH102A-TR-E is a NPN RF transistor with a collector base voltage rating of 20V and a maximum collector current of 70mA. It has a maximum power dissipation of 500mW and a transition frequency of 7GHz. The transistor is packaged in a lead-free tape and reel format and is RoHS compliant. Operating temperature range is from -55°C to 150°C.
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Technical Specifications
Onsemi FH102A-TR-E technical specifications.
General
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Gain | 12dB |
| Lead Free | Lead Free |
| Max Collector Current | 70mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FH102A-TR-E Datasheet
Download the complete datasheet for Onsemi FH102A-TR-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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