NPN Silicon Transistor for through-hole mounting. Features a maximum collector current of 12A and a maximum power dissipation of 130W. Offers a collector-emitter voltage (VCEO) of 400V and a collector base voltage (VCBO) of 700V. Operates within a temperature range of -65°C to 150°C, with a minimum hFE of 6 and a transition frequency of 4MHz. This RoHS compliant component is packaged in a rail/tube.
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi FJA13009TU technical specifications.
General
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 9V |
| Gain Bandwidth Product | 4MHz |
| Height | 20.1mm |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FJA13009TU |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA13009TU Datasheet
Download the complete datasheet for Onsemi FJA13009TU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
