PNP Epitaxial Silicon Transistor, through-hole mount, designed for high power applications. Features a maximum collector current of 17A and a continuous collector current rating of -15A. Offers a collector-emitter breakdown voltage of 250V and a collector-base voltage of -250V. Operates with a transition frequency of 30MHz and a maximum power dissipation of 130W. This RoHS compliant component is lead-free and suitable for operation between -50°C and 150°C.
Frequency30MHz
Current Rating-15A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi FJA4213OTU technical specifications.
General
| Collector Base Voltage (VCBO) | -250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 19.9mm |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 17A |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -230V |
| Weight | 6.401g |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA4213OTU Datasheet
Download the complete datasheet for Onsemi FJA4213OTU to view detailed technical specifications.
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