PNP Epitaxial Silicon Transistor designed for high power applications. Features a maximum collector current of 17A and a collector-emitter voltage of 250V. Offers a transition frequency of 30MHz and a minimum DC current gain (hFE) of 55. With a maximum power dissipation of 130W and an operating temperature range of -50°C to 150°C, this through-hole component is RoHS compliant and lead-free.
Frequency30MHz
Current Rating-15A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi FJA4213RTU technical specifications.
General
| Collector Base Voltage (VCBO) | -250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FJA4213 |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -230V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA4213RTU Datasheet
Download the complete datasheet for Onsemi FJA4213RTU to view detailed technical specifications.
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