NPN Epitaxial Silicon Transistor designed for through-hole mounting. Features a maximum collector current of 17A and a continuous collector current of 10A. Offers a collector-emitter voltage (VCEO) of 250V and a collector base voltage (VCBO) of 250V. Operates with a transition frequency of 30MHz and a minimum hFE of 55. This RoHS compliant component has a maximum power dissipation of 130W and is packaged in a rail/tube format.
Frequency30MHz
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJA4313OTU technical specifications.
General
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 130W |
| RoHS Compliant | Yes |
| Series | FJA4313 |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 140V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA4313OTU Datasheet
Download the complete datasheet for Onsemi FJA4313OTU to view detailed technical specifications.
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