NPN Epitaxial Silicon Transistor featuring a 250V Collector-Emitter Voltage (VCEO) and 250V Collector Base Voltage (VCBO). This through-hole mounted component offers a 10A current rating, a maximum collector current of 17A, and a power dissipation of 130W. With a transition frequency of 30MHz and a minimum hFE of 55, it operates across a wide temperature range of -50°C to 150°C. This RoHS compliant and lead-free transistor is packaged in a rail/tube format.
Frequency30MHz
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJA4313RTU technical specifications.
General
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FJA4313 |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 140V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJA4313RTU Datasheet
Download the complete datasheet for Onsemi FJA4313RTU to view detailed technical specifications.
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