PNP Epitaxial Silicon Transistor for through-hole mounting. Features a maximum collector current of 10A and a collector-emitter voltage of 140V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 30MHz. With a maximum power dissipation of 80W, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency30MHz
PackageSC
Current Rating-10A
MountingThrough Hole
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Technical Specifications
Onsemi FJAF4210RTU technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -140V |
| Weight | 6.962g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAF4210RTU Datasheet
Download the complete datasheet for Onsemi FJAF4210RTU to view detailed technical specifications.
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