NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 750V. Offers a low collector-emitter saturation voltage of 500mV and a maximum power dissipation of 60W. Operates across a wide temperature range from -55°C to 125°C. Through-hole mounting with a lead-free and RoHS-compliant design.
Frequency1MHz
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJAFS1510ATU technical specifications.
General
| Collector Base Voltage (VCBO) | 1.55kV |
| Collector Emitter Breakdown Voltage | 750V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 14.5mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 15.5mm |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ESBC™ |
| Transition Frequency | 15.4MHz |
| Weight | 6.962g |
| Width | 5.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJAFS1510ATU Datasheet
Download the complete datasheet for Onsemi FJAFS1510ATU to view detailed technical specifications.
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