NPN silicon bipolar junction transistor in a D2PAK surface mount package. Features a maximum collector current of 5A, collector-emitter breakdown voltage of 400V, and a maximum collector-emitter saturation voltage of 1.5V. Operates across a temperature range of -55°C to 150°C with a minimum hFE of 20. This RoHS compliant component is supplied on an 800-piece tape and reel.
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Onsemi FJB5555TM technical specifications.
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 1.05kV |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 14V |
| Height | 4.83mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 5A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.31247g |
| Width | 9.65mm |
| RoHS | Compliant |
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