NPN Epitaxial Silicon Transistor, surface mount DPAK package. Features 32V collector-emitter voltage, 2A continuous collector current, and 1W power dissipation. Offers a minimum DC current gain (hFE) of 130 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Frequency100MHz
PackageDPAK
Current Rating2A
MountingSurface Mount
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Technical Specifications
Onsemi FJD3076TM technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 2.3mm |
| hFE Min | 130 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 32V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJD3076TM Datasheet
Download the complete datasheet for Onsemi FJD3076TM to view detailed technical specifications.
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