NPN Silicon Transistor, surface mount DPAK package. Features 400V Collector-Emitter Breakdown Voltage, 4A Max Collector Current, and 1V Collector Emitter Saturation Voltage. Operates with a 4MHz transition frequency and offers a minimum hFE of 19. Rated for 1.1W power dissipation and a wide temperature range from -65°C to 150°C. Supplied in 2500-piece tape and reel packaging.
Frequency4MHz
PackageDPAK
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJD3305H1TM technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 19 |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJD3305H1TM Datasheet
Download the complete datasheet for Onsemi FJD3305H1TM to view detailed technical specifications.
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