NPN Bipolar Junction Transistor (BJT) in DPAK package, designed for high voltage and fast switching applications. Features a 400V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 3A. Offers a low Collector-Emitter Saturation Voltage of 500mV and a minimum hFE of 30. Operates within a temperature range of -55°C to 150°C, with a power dissipation of 1.25W. This surface-mount component is RoHS compliant and supplied on a 2500-piece tape and reel.
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Onsemi FJD5553TM technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 1.05kV |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 14V |
| Height | 2.39mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
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