NPN Silicon Bipolar Junction Transistor (BJT) in a TO-126 package. Features a 400V Collector-Emitter Voltage (VCEO) and 1.5A continuous collector current. Offers a maximum power dissipation of 20W and a transition frequency of 4MHz. This through-hole mounted component is RoHS compliant and operates within a temperature range of -65°C to 150°C.
Frequency4MHz
PackageTO-126
Current Rating1.5A
MountingThrough Hole
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Technical Specifications
Onsemi FJE3303H2TU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 11mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 1.5A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJE3303H2TU Datasheet
Download the complete datasheet for Onsemi FJE3303H2TU to view detailed technical specifications.
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