The FJI5603DTU is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 800V and a maximum collector current of 3A. It features a TO-262-3 package and is designed for through-hole mounting. The transistor has a maximum power dissipation of 100W and operates within a temperature range of -55°C to 150°C. It is compliant with RoHS regulations and is available in a lead-free package.
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Onsemi FJI5603DTU technical specifications.
| Package/Case | TO-262-3 |
| Collector Base Voltage (VCBO) | 1.6kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2.5V |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 5MHz |
| Weight | 2.084g |
| RoHS | Compliant |
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