NPN Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a 1.7kV Collector Base Voltage (VCBO) and 800V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 20A and a maximum power dissipation of 200W. Packaged in a TO-264-3 through-hole mount, this lead-free and RoHS compliant component operates from -55°C to 150°C.
PackageTO-264-3
Current Rating20A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJL6920TU technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Base Voltage (VCBO) | 1.7kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 20A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 5.5 |
| Lead Free | Lead Free |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Weight | 6.756g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJL6920TU Datasheet
Download the complete datasheet for Onsemi FJL6920TU to view detailed technical specifications.
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