PNP Epitaxial Silicon Transistor featuring a TO-92-3 package. Offers a Collector-Emitter Voltage (VCEO) of 50V and a Continuous Collector Current of -100mA. Includes integrated bias resistors, a minimum hFE of 30, and a transition frequency of 200MHz. Designed for through-hole mounting, this lead-free and RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 300mW.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FJN4305RTA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 5.33mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.24g |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJN4305RTA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
