PNP Epitaxial Silicon Transistor featuring a TO-92-3 package. Offers a Collector-Emitter Voltage (VCEO) of 50V and a Continuous Collector Current of -100mA. Includes integrated bias resistors, a minimum hFE of 30, and a transition frequency of 200MHz. Designed for through-hole mounting, this lead-free and RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 300mW.
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi FJN4305RTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 5.33mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJN4305RTA Datasheet
Download the complete datasheet for Onsemi FJN4305RTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.