NPN Silicon Transistor, TO-220-3 package, featuring a 400V Collector-Emitter Voltage (VCEO) and 700V Collector Base Voltage (VCBO). This through-hole component offers a maximum collector current of 8A and a power dissipation of 80W. With a transition frequency of 4MHz and a minimum hFE of 5, it is designed for general-purpose applications. RoHS compliant and lead-free.
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Onsemi FJP13007H1TU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 1.214g |
| RoHS | Compliant |
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