NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 8A and a collector-emitter voltage (VCEO) of 400V, with a collector base voltage (VCBO) of 700V. Offers a maximum power dissipation of 80W and a transition frequency of 4MHz. Designed for through-hole mounting, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
Frequency4MHz
PackageTO-220-3
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi FJP13007TU technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
700V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
3V
Current Rating
8A
Emitter Base Voltage (VEBO)
9V
Frequency
4MHz
Gain Bandwidth Product
4MHz
Height
9.4mm
hFE Min
5
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
8A
Max Frequency
4MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
4MHz
DC Rated Voltage
400V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FJP13007TU Datasheet
Download the complete datasheet for Onsemi FJP13007TU to view detailed technical specifications.
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