NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 8A and a collector-emitter voltage (VCEO) of 400V, with a collector base voltage (VCBO) of 700V. Offers a maximum power dissipation of 80W and a transition frequency of 4MHz. Designed for through-hole mounting, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FJP13007TU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FJP13007TU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 9.4mm |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 8A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJP13007TU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
