High-voltage NPN bipolar junction transistor (BJT) designed for fast switching applications. Features a 400V collector-emitter voltage (VCEO) and a 700V collector-base voltage (VCBO). Offers a continuous collector current rating of 12A with a maximum power dissipation of 100W. Operates at frequencies up to 4MHz and is housed in a TO-220 package for through-hole mounting. This RoHS compliant component is suitable for demanding power electronics designs.
Frequency4MHz
PackageTO-220
Current Rating12A
MountingThrough Hole
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Technical Specifications
Onsemi FJP13009H2TU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 9.2mm |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP13009H2TU Datasheet
Download the complete datasheet for Onsemi FJP13009H2TU to view detailed technical specifications.
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