NPN Silicon Transistor for through-hole mounting in a TO-220 package. Features a 400V collector-emitter breakdown voltage and 4A continuous collector current. Offers a maximum power dissipation of 75W and a transition frequency of 4MHz. Operates within a temperature range of -65°C to 150°C, is lead-free, and RoHS compliant.
Frequency4MHz
PackageTO-220
Current Rating4A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi FJP3305H1TU technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 16.51mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 700V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP3305H1TU Datasheet
Download the complete datasheet for Onsemi FJP3305H1TU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
