NPN silicon bipolar junction transistor (BJT) designed for through-hole mounting in a TO-220 package. Features a maximum collector-emitter voltage (VCEO) of 400V, a collector-base voltage (VCBO) of 700V, and a maximum collector current of 4A. Offers a power dissipation of 75W and a transition frequency of 4MHz. Operates across a temperature range of -65°C to 150°C and is lead-free and RoHS compliant.
Frequency4MHz
PackageTO-220
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi FJP3305H2TU technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
700V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
1V
Current Rating
4A
Emitter Base Voltage (VEBO)
9V
Frequency
4MHz
Gain Bandwidth Product
4MHz
Height
16.51mm
hFE Min
8
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
4A
Max Frequency
4MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
75W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
4MHz
DC Rated Voltage
700V
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FJP3305H2TU Datasheet
Download the complete datasheet for Onsemi FJP3305H2TU to view detailed technical specifications.
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