NPN silicon bipolar junction transistor (BJT) designed for through-hole mounting in a TO-220 package. Features a maximum collector-emitter voltage (VCEO) of 400V, a collector-base voltage (VCBO) of 700V, and a maximum collector current of 4A. Offers a power dissipation of 75W and a transition frequency of 4MHz. Operates across a temperature range of -65°C to 150°C and is lead-free and RoHS compliant.
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Onsemi FJP3305H2TU technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 16.51mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 4A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 700V |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
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