The FJP3307DTU is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 400V and a maximum collector current of 8A. It has a maximum power dissipation of 80W and operates over a temperature range of -55°C to 150°C. The transistor is lead-free and RoHS compliant, packaged in a rail/Tube with 50 units per package.
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Onsemi FJP3307DTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
| RoHS | Compliant |
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