NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220-3 package. Features a collector-emitter voltage (VCEO) of 400V, collector base voltage (VCBO) of 700V, and a maximum collector current of 4A. Offers a minimum DC current gain (hFE) of 8 and a maximum power dissipation of 70W. Operates across a temperature range of -65°C to 150°C, with a collector-emitter saturation voltage of 1.5V. This RoHS compliant component is lead-free and packaged in a rail/tube.
PackageTO-220-3
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJP5304DTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP5304DTU Datasheet
Download the complete datasheet for Onsemi FJP5304DTU to view detailed technical specifications.
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