NPN Bipolar Junction Transistor (BJT) designed for high voltage, fast switching applications. Features a 400V collector-emitter breakdown voltage and a 1.05kV collector-base voltage. Offers a maximum collector current of 4A and a low collector-emitter saturation voltage of 1.5V. Packaged in a TO-220-3 through-hole mount, this lead-free and RoHS compliant component operates from -55°C to 150°C with a power dissipation of 70W.
PackageTO-220-3
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJP5554TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.05kV |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 15V |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP5554TU Datasheet
Download the complete datasheet for Onsemi FJP5554TU to view detailed technical specifications.
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