NPN silicon bipolar junction transistor (BJT) in a TO-220-3 package. Features a 400V collector-emitter breakdown voltage (VCEO) and a 1.05kV collector-base voltage (VCBO). Offers a maximum collector current of 5A and a power dissipation of 75W. Minimum DC current gain (hFE) is 20. Through-hole mounting with lead-free and RoHS compliant construction.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi FJP5555TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.05kV |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 14V |
| Height | 16.51mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJP5555TU Datasheet
Download the complete datasheet for Onsemi FJP5555TU to view detailed technical specifications.
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