NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220-3 package. Features a 400V collector-emitter breakdown voltage and a 400V collector-emitter voltage (VCEO). Offers a continuous collector current rating of 8A with a maximum power dissipation of 40W. Operates with a transition frequency of 4MHz and a minimum hFE of 26. This RoHS compliant component is lead-free and suitable for a wide operating temperature range from -65°C to 150°C.
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Onsemi FJPF13007H2TTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 26 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| RoHS | Compliant |
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